THEORY OF POTENTIAL DISTRIBUTIONS IN ABRUPT HETEROJUNCTION CRYSTALLINE SEMICONDUCTOR-DEVICES - TREATMENT OF SCHOTTKY BARRIERS AND RECTIFIERS

被引：32
作者：
MOHAMMAD, SN
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 05期
关键词：
D O I：
10.1063/1.339948
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1614 / 1627
页数：14
相关论文
共 67 条
[1]   APPROXIMATION FOR THE FERMI DIRAC INTEGRAL WITH APPLICATIONS TO DEGENERATELY DOPED SOLAR-CELLS AND OTHER SEMICONDUCTOR-DEVICES [J].
ABIDI, STH ;
MOHAMMAD, SN .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (11) :3341-3343
[2]   HEAVILY DOPED SEMICONDUCTORS AND DEVICES [J].
ABRAM, RA ;
REES, GJ ;
WILSON, BLH .
ADVANCES IN PHYSICS, 1978, 27 (06) :799-892
[3]   PROPOSAL FOR A NEW APPROACH TO HETEROJUNCTION THEORY [J].
ADAMS, MJ ;
NUSSBAUM, A .
SOLID-STATE ELECTRONICS, 1979, 22 (09) :783-791
[4]   EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].
ANDERSON, RL .
SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&
[5]   ELECTRONIC-PROPERTIES OF A SEMICONDUCTOR SUPER-LATTICE .1. SELF-CONSISTENT CALCULATION OF SUBBAND STRUCTURE AND OPTICAL-SPECTRA [J].
ANDO, T ;
MORI, S .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1979, 47 (05) :1518-1527
[6]   THE EFFECT OF POSITION-DEPENDENT DIELECTRIC-CONSTANT ON THE ELECTRIC-FIELD AND CHARGE-DENSITY IN A P-N-JUNCTION [J].
ANDREWS, MH ;
MARSHAK, AH ;
SHRIVASTAVA, R .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6783-6787
[7]   NUMERICAL-SIMULATION OF GAAS GAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
ASBECK, PM ;
MILLER, DL ;
ASATOURIAN, R ;
KIRKPATRICK, CG .
ELECTRON DEVICE LETTERS, 1982, 3 (12) :403-406
[8]  
BEER AC, 1955, HELV PHYS ACTA, V28, P529
[9]   BAND-GAP NARROWING IN HEAVILY DOPED MANY-VALLEY SEMICONDUCTORS [J].
BERGGREN, KF ;
SERNELIUS, BE .
PHYSICAL REVIEW B, 1981, 24 (04) :1971-1986
[10]  
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P351
1234567