INFLUENCE OF OXIDATION RATE AND HEAT TREATMENT ON SI SURFACE POTENTIAL IN SI-SIO2 SYSTEM

被引：40
作者：
REVESZ, AG
ZAININGER, KH
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1966年 / ED13卷 / 02期
关键词：
D O I：
10.1109/T-ED.1966.15676
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：246 / +
页数：1
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