A HIGH-SPEED BURST MODE OPTOELECTRONIC INTEGRATED-CIRCUIT PHOTORECEIVER USING INP/INGAAS HBTS

被引：7

作者：

LUNARDI, L ^{[1
]}

CHANDRASEKHAR, S ^{[1
]}

SWARTZ, RG ^{[1
]}

HAMM, RA ^{[1
]}

QUA, GJ ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 07期

关键词：

D O I：

10.1109/68.311464

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel monolithic differential photoreceiver has been realized using InP/InGaAs heterojunction bipolar transistors. This dc-coupled differential OEIC operated successfully with both continuous and burst-mode data streams up to 5 Gb/s with a sensitivity of -18.6 dBm for the continuous mode operation at a bit error rate of 10(-9). There was a 1.5 dB penalty of the sensitivity value in burst-mode operation. This is the first demonstration of an OEIC for burst-mode operation at high speeds.

引用

页码：817 / 818

页数：2

共 6 条

[1] 4 GBIT/S PIN/HBT MONOLITHIC PHOTORECEIVER [J].