SILICON DOPING EFFECTS IN REACTIVE PLASMA-ETCHING

被引：48

作者：

LEE, YH

CHEN, MM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 02期

关键词：

D O I：

10.1116/1.583405

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：468 / 475

页数：8

共 26 条

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