BAND-STRUCTURE AND CHARGE CONTROL STUDIES OF N-TYPE AND P-TYPE PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS

被引：57
作者：
JAFFE, M
SINGH, J
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 01期
关键词：
D O I：
10.1063/1.342545
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：329 / 338
页数：10
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