Damage-induced luminescence in InP

被引：10

作者：

Sekiguchi, T ^{[1
]}

Leipner, HS ^{[1
]}

机构：

[1] UNIV HALLE WITTENBERG,DEPT PHYS,D-06108 HALLE,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 25期

关键词：

D O I：

10.1063/1.115380

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical properties of scratched InP specimens were studied by means of cathodoluminescence (CL). A new luminescence band around 942 nm (S1) was detected in the vicinity of scratches. The S1 band is composed of two peaks at 938 and 946 nm. Monochromatic CL images showed that the S1 luminescence is constrained to regions of high residual strain and not related to dislocations or cracks. The S1 intensity increased in samples with a higher Fe content. S1 vanished after 450 K annealing. (C) 1995 American Institute of Physics.

引用

页码：3777 / 3779

页数：3

共 8 条

[1]

BARTHRUFF D, 1979, J ELECTRON MATER, V8, P485, DOI 10.1007/BF02652400

[2]

HORII Y, 1990, DEFECT CONTROL SEMIC, V2, P1483

[3]

MAEDA K, 1983, J PHYS, V44, pC4

[4] STRESS-INDUCED AMORPHIZATION OF A SILICON CRYSTAL BY MECHANICAL SCRATCHING [J].

MINOWA, K ;

SUMINO, K .

PHYSICAL REVIEW LETTERS, 1992, 69 (02) :320-322

[5]

OBERSTAR JD, 1984, THIN SOLID FILMS, V94, P161

[6]

Rozhanskii V. N., 1979, Soviet Physics - Solid State, V21, P881

[7] QUANTITATIVE ELECTRON-BEAM TESTER FOR DEFECTS IN SEMICONDUCTORS (CL/EBIC/SDLTS SYSTEM) [J].

SEKIGUCHI, T ;

SUMINO, K .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1995, 66 (08) :4277-4282

[8]

SHRETER YG, IN PRESS MATER SCI F

← 1 →