INVESTIGATION OF INTERFACES IN GAINAS/INP SUPERLATTICES BY X-RAY MULTIPLE CRYSTAL DIFFRACTOMETRY

被引：0
|
作者：
LYONS, MH
SCOTT, EG
HALLIWELL, MAG
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1989年 / 100期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
X-ray diffractometry provides a powerful and non-destructive method for characterizing the structure of superlattices. In this paper we describe the use of x-ray diffraction to study interfacial grading on a monolayer scale. We show that compositional grading in GaInAs/InP superlattices grown by gas-source MBE is limited to 2 or 3 monolayers.
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页码：473 / 478
页数：6
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