A STUDY OF 2 MEV OXYGEN IMPLANTATION TO FORM DEEPLY BURIED SIO2 LAYERS

被引：12

作者：

GROB, JJ ^{[1
]}

GROB, A ^{[1
]}

THEVENIN, P ^{[1
]}

SIFFERT, P ^{[1
]}

DANTERROCHES, C ^{[1
]}

GOLANSKI, A ^{[1
]}

机构：

[1] CTR NATL ETUDES TELECOMMUNICAT,F-38243 MEYLAN,FRANCE

来源：

JOURNAL OF MATERIALS RESEARCH | 1989年 / 4卷 / 05期

关键词：

D O I：

10.1557/JMR.1989.1227

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1227 / 1232

页数：6

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