ELECTRICAL BREAKDOWN IN THIN GATE AND TUNNELING OXIDES

被引：0
作者：
CHEN, IC
HOLLAND, SE
HU, CM
机构：
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1985年 / 20卷 / 01期
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：333 / 342
页数：10
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