ELECTROABSORPTION OF NICKEL-DOPED GALLIUM-ARSENIDE

被引：0
|
作者：
GUTKIN, AA [1 ]
NASLEDOV, DN [1 ]
FARADZHEV, FE [1 ]
机构：
[1] AF IOFFE PHYSICOTECH INST, LENINGRAD, USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1974年 / 8卷 / 03期
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：298 / 300
页数：3
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