PLASMA ETCHING - PSEUDO-BLACK-BOX APPROACH

被引：137

作者：

WINTERS, HF

COBURN, JW

KAY, E

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 12期

关键词：

D O I：

10.1063/1.323628

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4973 / 4983

页数：11

共 27 条

[1]

ABE H, 1975, J JAPAN SOC APPL P S, V44, P287

[2] MOLECULAR ELECTRON IONIZATION CROSS SECTIONS AT 70-EV [J].

BERAN, JA ;

KEVAN, L .

JOURNAL OF PHYSICAL CHEMISTRY, 1969, 73 (11) :3866-&

[3] DRY PROCESS TECHNOLOGY (REACTIVE ION ETCHING) [J].

BONDUR, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (05) :1023-1029

[4] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J].

COBURN, JW ;

WINTERS, HF ;

CHUANG, TJ .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3532-3540

[5] A SYSTEM FOR DETERMINING MASS ENERGY OF PARTICLES INCIDENT ON A SUBSTRATE IN A PLANAR DIODE SPUTTERING SYSTEM [J].

COBURN, JW .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1970, 41 (08) :1219-&

[6] PHOTOIONIZATION AND ABSORPTION CROSS SECTIONS AND FLUORESCENCE OF CF4 [J].

COOK, GR ;

CHING, BK .

JOURNAL OF CHEMICAL PHYSICS, 1965, 43 (05) :1794-&

[7]

FIELD FH, 1974, ELECTRON IMPACT PHEN, P387

[8] STUDY OF OPTICAL EMISSION FROM AN RF PLASMA DURING SEMICONDUCTOR ETCHING [J].

HARSHBARGER, WR ;

PORTER, RA ;

MILLER, TA ;

NORTON, P .

APPLIED SPECTROSCOPY, 1977, 31 (03) :201-207

[9]

HARSHBARGER WR, 1973, J ELECTRON SPECTROSC, V1, P319

[10] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J].

HEINECKE, RAH .

SOLID-STATE ELECTRONICS, 1975, 18 (12) :1146-1147

← 1 2 3 →