RELATIONSHIP BETWEEN MOSFET DEGRADATION AND HOT-ELECTRON-INDUCED INTERFACE-STATE GENERATION

被引：143

作者：

HSU, FC ^{[1
]}

TAM, S ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 02期

关键词：

D O I：

10.1109/EDL.1984.25829

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：50 / 52

页数：3

共 50 条

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