RELATIONSHIP BETWEEN MOSFET DEGRADATION AND HOT-ELECTRON-INDUCED INTERFACE-STATE GENERATION

被引：143
作者：
HSU, FC [1 ]
TAM, S [1 ]
机构：
[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
来源：
IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 02期
关键词：
D O I：
10.1109/EDL.1984.25829
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：50 / 52
页数：3
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