RELATIONSHIP BETWEEN MOSFET DEGRADATION AND HOT-ELECTRON-INDUCED INTERFACE-STATE GENERATION

被引：143

作者：

HSU, FC ^{[1
]}

TAM, S ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 02期

关键词：

D O I：

10.1109/EDL.1984.25829

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：50 / 52

页数：3

共 50 条

[1] A MODEL FOR HOT-ELECTRON-INDUCED MOSFET LINEAR-CURRENT DEGRADATION BASED ON MOBILITY REDUCTION DUE TO INTERFACE-STATE GENERATION
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[2] HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT
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[3] EFFECT OF FINAL ANNEALING ON HOT-ELECTRON-INDUCED MOSFET DEGRADATION
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[4] HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT
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[5] ANALYSIS OF MOSFET DEGRADATION DUE TO HOT-ELECTRON STRESS IN TERMS OF INTERFACE-STATE AND FIXED-CHARGE GENERATION
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[6] HOT-ELECTRON-INDUCED MOSFET DEGRADATION AT LOW-TEMPERATURES
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[7] TRAPPED-ELECTRON AND GENERATED INTERFACE-TRAP EFFECTS IN HOT-ELECTRON-INDUCED MOSFET DEGRADATION
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[8] EFFECT OF FINAL ANNEALING ON HOT-ELECTRON-INDUCED MOSFET DEGRADATION.
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[9] TRAPPED-ELECTRON AND GENERATED INTERFACE-TRAP EFFECTS IN HOT-ELECTRON-INDUCED MOSFET DEGRADATION.
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[10] HOT-ELECTRON-INDUCED PHOTON AND PHOTOCARRIER GENERATION IN SILICON MOSFET's.
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