INTERFACE PROPERTIES AND SCHOTTKY-BARRIER ON POLAR SURFACES OF CDS AND GAP CRYSTALS

被引：0
作者：
KUSAKA, M [1 ]
KANAKURA, M [1 ]
OKAZAKI, S [1 ]
机构：
[1] OKAYAMA UNIV,FAC SCI,LAB SURFACE SCI,OKAYAMA,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年
关键词：
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：437 / 440
页数：4
相关论文
共 50 条
[21]   EFFECT OF SCHOTTKY-BARRIER PROPERTIES ON FREQUENCY DISPERSION OF TRANSCONDUCTANCE OF FIELD TRANSISTOR WITH SCHOTTKY-BARRIER [J].
GERGEL, VA ;
ILICHEV, EA ;
POLTORATSKII, EA ;
RODIONOV, AV ;
TARNAVSKII, SP ;
FEDORENKO, AV .
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1991, 17 (14) :78-80
[22]   GASB SURFACES STATES AND SCHOTTKY-BARRIER PINNING [J].
CHYE, PW ;
BABALOLA, IA ;
SUKEGAWA, T ;
SPICER, WE .
PHYSICAL REVIEW LETTERS, 1975, 35 (23) :1602-1604
[23]   THE FORMATION OF THE SCHOTTKY-BARRIER AT THE V/SI INTERFACE [J].
CLABES, JG ;
RUBLOFF, GW ;
REIHL, B ;
PURTELL, RJ ;
HO, PS ;
ZARTNER, A ;
HIMPSEL, FJ ;
EASTMAN, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :684-687
[24]   METAL-N-GAP SCHOTTKY-BARRIER HEIGHTS [J].
LEI, TF ;
LEE, CL ;
CHANG, CY .
SOLID-STATE ELECTRONICS, 1979, 22 (12) :1035-1037
[25]   THE ADSORPTION OF OXYGEN ON INP CLEAVED SURFACES AND ITS INFLUENCE ON SCHOTTKY-BARRIER PROPERTIES [J].
ISMAIL, A ;
BENBRAHIM, A ;
PALAU, JM ;
LASSABATERE, L .
SURFACE SCIENCE, 1986, 168 (1-3) :409-415
[26]   INTERFACE CHEMISTRY AND ELECTRICAL-PROPERTIES OF TUNGSTEN SCHOTTKY-BARRIER CONTACTS TO GAAS [J].
WALDROP, JR .
APPLIED PHYSICS LETTERS, 1982, 41 (04) :350-352
[27]   MODEL OF THE SCHOTTKY-BARRIER WITH SPATIALLY DISTRIBUTED INTERFACE STATES [J].
LU, GN ;
NEFFATI, T ;
BARRET, C .
REVUE DE PHYSIQUE APPLIQUEE, 1987, 22 (12) :1809-1817
[28]   THE INTERFACE STATE STUDY OF TASIX/GAAS SCHOTTKY-BARRIER [J].
KAO, CH ;
HUANG, FS ;
CHEN, JR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03) :2090-2095
[29]   FORMATION OF SCHOTTKY-BARRIER AT THE TM/GAAS(110) INTERFACE [J].
PRIETSCH, M ;
DOMKE, M ;
LAUBSCHAT, C ;
KAINDL, G .
PHYSICAL REVIEW LETTERS, 1988, 60 (05) :436-439
[30]   SCHOTTKY-BARRIER AND CONTACT RESISTANCE AT A NIOBIUM SILICON INTERFACE [J].
HESLINGA, DR ;
KLAPWIJK, TM .
APPLIED PHYSICS LETTERS, 1989, 54 (11) :1048-1050
12345