EARLY GROWTH-STAGES OF GE-0.85 SI-0.15 ON SI(001) FROM BI SOLUTION

被引：23

作者：

DORSCH, W ^{[1
]}

CHRISTIANSEN, S ^{[1
]}

ALBRECHT, M ^{[1
]}

HANSSON, PO ^{[1
]}

BAUSER, E ^{[1
]}

STRUNK, HP ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH, D-70569 STUTTGART, GERMANY

来源：

SURFACE SCIENCE | 1995年 / 331卷

关键词：

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATIONS; GROWTH; SEMICONDUCTING FILMS; SEMICONDUCTOR-SEMICONDUCTOR THIN FILM STRUCTURES; SILICON-GERMANIUM;

D O I：

10.1016/0039-6028(95)00152-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We investigate by atomic force microscopy the early growth stages of Ge0.85Si0.15 grown by solution epitaxy on Si(001). The layers grow in the Stranski-Krastanov growth mode with facetted islands of pyramidal and, with further growth, truncated pyramidal shape. Finite element calculations of the strain fields within the islands at different growth stages yield an increasing strain energy density near the island basis edges. The effect of the increase in strain energy density is to limit the lateral growth, whereas the relaxed top regions enhance growth in height.

引用

页码：896 / 901

页数：6

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