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ELECTRON-TRAP GENERATION BY RECOMBINATION OF ELECTRONS AND HOLES IN SIO2
被引:108
作者
:
CHEN, IC
论文数:
0
引用数:
0
h-index:
0
CHEN, IC
HOLLAND, S
论文数:
0
引用数:
0
h-index:
0
HOLLAND, S
HU, C
论文数:
0
引用数:
0
h-index:
0
HU, C
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1987年
/ 61卷
/ 09期
关键词
:
D O I
:
10.1063/1.338388
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:4544 / 4548
页数:5
相关论文
共 26 条
[1]
1 MU-M MOSFET VLSI TECHNOLOGY .8. RADIATION EFFECTS
[J].
AITKEN, JM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
AITKEN, JM
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
:372
-379
[2]
CURRENT INDUCED TRAP GENERATION IN SIO2
[J].
BADIHI, A
论文数:
0
引用数:
0
h-index:
0
BADIHI, A
;
EITAN, B
论文数:
0
引用数:
0
h-index:
0
EITAN, B
;
COHEN, I
论文数:
0
引用数:
0
h-index:
0
COHEN, I
;
SHAPPIR, J
论文数:
0
引用数:
0
h-index:
0
SHAPPIR, J
.
APPLIED PHYSICS LETTERS,
1982,
40
(05)
:396
-398
[3]
HOLE TRAPPING AND BREAKDOWN IN THIN SIO2
[J].
CHEN, IC
论文数:
0
引用数:
0
h-index:
0
CHEN, IC
;
HOLLAND, S
论文数:
0
引用数:
0
h-index:
0
HOLLAND, S
;
HU, CM
论文数:
0
引用数:
0
h-index:
0
HU, CM
.
IEEE ELECTRON DEVICE LETTERS,
1986,
7
(03)
:164
-167
[4]
CHEN IC, 1985, IEEE T ELECTRON DEV, V32, P413, DOI 10.1109/T-ED.1985.21957
[5]
SUBSTRATE HOLE CURRENT AND OXIDE BREAKDOWN
[J].
CHEN, IC
论文数:
0
引用数:
0
h-index:
0
CHEN, IC
;
HOLLAND, S
论文数:
0
引用数:
0
h-index:
0
HOLLAND, S
;
YOUNG, KK
论文数:
0
引用数:
0
h-index:
0
YOUNG, KK
;
CHANG, C
论文数:
0
引用数:
0
h-index:
0
CHANG, C
;
HU, C
论文数:
0
引用数:
0
h-index:
0
HU, C
.
APPLIED PHYSICS LETTERS,
1986,
49
(11)
:669
-671
[6]
RADIATION-DAMAGE IN SILICON DIOXIDE FILMS EXPOSED TO REACTIVE ION ETCHING
[J].
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
DIMARIA, DJ
;
EPHRATH, LM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
EPHRATH, LM
;
YOUNG, DR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
YOUNG, DR
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(06)
:4015
-4021
[7]
USE OF ELECTRON-TRAPPING REGION TO REDUCE LEAKAGE CURRENTS AND IMPROVE BREAKDOWN CHARACTERISTICS OF MOS STRUCTURES
[J].
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
DIMARIA, DJ
;
YOUNG, DR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
YOUNG, DR
;
ORMOND, DW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ORMOND, DW
.
APPLIED PHYSICS LETTERS,
1977,
31
(10)
:680
-682
[8]
IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN
[J].
DISTEFANO, TH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
DISTEFANO, TH
;
SHATZKES, M
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
SHATZKES, M
.
APPLIED PHYSICS LETTERS,
1974,
25
(12)
:685
-687
[9]
DIELECTRIC-BREAKDOWN IN ELECTRICALLY STRESSED THIN-FILMS OF THERMAL SIO2
[J].
HARARI, E
论文数:
0
引用数:
0
h-index:
0
HARARI, E
.
JOURNAL OF APPLIED PHYSICS,
1978,
49
(04)
:2478
-2489
[10]
COMPARISON OF HIGH-FIELD STRESS EFFECTS IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES WITH ALUMINUM AND POLYCRYSTALLINE SILICON GATES USING INTERNAL PHOTOEMISSION MEASUREMENTS
[J].
HEYNS, MM
论文数:
0
引用数:
0
h-index:
0
HEYNS, MM
;
DEKEERSMAECKER, RF
论文数:
0
引用数:
0
h-index:
0
DEKEERSMAECKER, RF
.
JOURNAL OF APPLIED PHYSICS,
1985,
58
(10)
:3936
-3939
←
1
2
3
→
共 26 条
[1]
1 MU-M MOSFET VLSI TECHNOLOGY .8. RADIATION EFFECTS
[J].
AITKEN, JM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
AITKEN, JM
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
:372
-379
[2]
CURRENT INDUCED TRAP GENERATION IN SIO2
[J].
BADIHI, A
论文数:
0
引用数:
0
h-index:
0
BADIHI, A
;
EITAN, B
论文数:
0
引用数:
0
h-index:
0
EITAN, B
;
COHEN, I
论文数:
0
引用数:
0
h-index:
0
COHEN, I
;
SHAPPIR, J
论文数:
0
引用数:
0
h-index:
0
SHAPPIR, J
.
APPLIED PHYSICS LETTERS,
1982,
40
(05)
:396
-398
[3]
HOLE TRAPPING AND BREAKDOWN IN THIN SIO2
[J].
CHEN, IC
论文数:
0
引用数:
0
h-index:
0
CHEN, IC
;
HOLLAND, S
论文数:
0
引用数:
0
h-index:
0
HOLLAND, S
;
HU, CM
论文数:
0
引用数:
0
h-index:
0
HU, CM
.
IEEE ELECTRON DEVICE LETTERS,
1986,
7
(03)
:164
-167
[4]
CHEN IC, 1985, IEEE T ELECTRON DEV, V32, P413, DOI 10.1109/T-ED.1985.21957
[5]
SUBSTRATE HOLE CURRENT AND OXIDE BREAKDOWN
[J].
CHEN, IC
论文数:
0
引用数:
0
h-index:
0
CHEN, IC
;
HOLLAND, S
论文数:
0
引用数:
0
h-index:
0
HOLLAND, S
;
YOUNG, KK
论文数:
0
引用数:
0
h-index:
0
YOUNG, KK
;
CHANG, C
论文数:
0
引用数:
0
h-index:
0
CHANG, C
;
HU, C
论文数:
0
引用数:
0
h-index:
0
HU, C
.
APPLIED PHYSICS LETTERS,
1986,
49
(11)
:669
-671
[6]
RADIATION-DAMAGE IN SILICON DIOXIDE FILMS EXPOSED TO REACTIVE ION ETCHING
[J].
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
DIMARIA, DJ
;
EPHRATH, LM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
EPHRATH, LM
;
YOUNG, DR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
YOUNG, DR
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(06)
:4015
-4021
[7]
USE OF ELECTRON-TRAPPING REGION TO REDUCE LEAKAGE CURRENTS AND IMPROVE BREAKDOWN CHARACTERISTICS OF MOS STRUCTURES
[J].
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
DIMARIA, DJ
;
YOUNG, DR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
YOUNG, DR
;
ORMOND, DW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ORMOND, DW
.
APPLIED PHYSICS LETTERS,
1977,
31
(10)
:680
-682
[8]
IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN
[J].
DISTEFANO, TH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
DISTEFANO, TH
;
SHATZKES, M
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
SHATZKES, M
.
APPLIED PHYSICS LETTERS,
1974,
25
(12)
:685
-687
[9]
DIELECTRIC-BREAKDOWN IN ELECTRICALLY STRESSED THIN-FILMS OF THERMAL SIO2
[J].
HARARI, E
论文数:
0
引用数:
0
h-index:
0
HARARI, E
.
JOURNAL OF APPLIED PHYSICS,
1978,
49
(04)
:2478
-2489
[10]
COMPARISON OF HIGH-FIELD STRESS EFFECTS IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES WITH ALUMINUM AND POLYCRYSTALLINE SILICON GATES USING INTERNAL PHOTOEMISSION MEASUREMENTS
[J].
HEYNS, MM
论文数:
0
引用数:
0
h-index:
0
HEYNS, MM
;
DEKEERSMAECKER, RF
论文数:
0
引用数:
0
h-index:
0
DEKEERSMAECKER, RF
.
JOURNAL OF APPLIED PHYSICS,
1985,
58
(10)
:3936
-3939
←
1
2
3
→