INITIAL-STAGES OF EPITAXIAL SEMICONDUCTOR-INSULATOR HETEROINTERFACE FORMATION

被引：26

作者：

OLMSTEAD, MA ^{[1
]}

BRINGANS, RD ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1990年 / 51卷

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0368-2048(90)80184-C

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

The current understanding of the interface formed as CaF2 is grown epitaxially on Si(111) is reviewed. Photoemission studies of the growth of strontium fluoride on Si(111) and the growth of Ge on CaF2-on-Si(111) substrates are compared with these findings. The large change in fluoride lattice constant between CaF2 and SrF2 is found not to affect the interface bonding, indicating the dominance of chemical factors. The growth of Ge on CaF2-on-Si(111) structures is found to be enhanced by electron irradiation of the substrate, which is related to the semiconductor-cation bonding found at the CaF2-on-Si(111) and SrF2-on-Si(111) interfaces. © 1990.

引用

页码：599 / 612

页数：14

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