MODELING AND CHARACTERIZATION OF DOPANT REDISTRIBUTIONS IN METAL AND SILICIDE CONTACTS

被引：17

作者：

SHENAI, K ^{[1
]}

SANGIORGI, E ^{[1
]}

SWANSON, RM ^{[1
]}

SARASWAT, KC ^{[1
]}

DUTTON, RW ^{[1
]}

机构：

[1] UNIV BOLOGNA,DEPT ELECTR,I-40126 BOLOGNA,ITALY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 04期

关键词：

D O I：

10.1109/T-ED.1985.22022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：793 / 799

页数：7

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