TRANSMISSION ELECTRON-MICROSCOPE STUDY OF THE INITIAL-STAGE OF FORMATION OF PD2SI AND PT2SI

被引:10
作者
ABOELFOTOH, MO
ALESSANDRINI, A
DHEURLE, FM
机构
关键词
D O I
10.1063/1.97426
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1242 / 1244
页数:3
相关论文
共 18 条
[1]   Kinetics of formation of silicides: A review [J].
d'Heurle, F. M. ;
Gas, P. .
JOURNAL OF MATERIALS RESEARCH, 1986, 1 (01) :205-221
[2]   MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE [J].
FREEOUF, JL ;
RUBLOFF, GW ;
HO, PS ;
KUAN, TS .
PHYSICAL REVIEW LETTERS, 1979, 43 (24) :1836-1839
[3]   TRANSITION-METAL SILICIDES - TRENDS IN THE BONDING IN THE BULK AND AT THE INTERFACE [J].
GRUNTHANER, PJ ;
GRUNTHANER, FJ ;
MADHUKAR, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :637-638
[4]  
LAIBOWITZ RB, 1982, TREATISE MATERIALS S, V24, P285
[5]   THIN-FILM COMPOUNDS IN PLANAR PT-SI REACTION [J].
MAJNI, G ;
COSTATO, M ;
PANINI, F ;
CELOTTI, G .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1985, 46 (05) :631-641
[6]   CHEMICAL-REACTION AND SILICIDE FORMATION AT THE PT/SI INTERFACE [J].
MATZ, R ;
PURTELL, RJ ;
YOKOTA, Y ;
RUBLOFF, GW ;
HO, PS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1984, 2 (02) :253-258
[7]   INITIAL REACTIONS AT THE INTERFACE OF PT AND AMORPHOUS-SILICON [J].
NEMANICH, RJ ;
THOMPSON, MJ ;
JACKSON, WB ;
TSAI, CC ;
STAFFORD, BL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :519-523
[8]  
NICOLET MA, 1983, VLSI ELECTRONICS MIC, V8, P330
[9]  
RUBLOFF G, 1986, MATER RES SOC S P, V54, P5
[10]   MATERIAL REACTION AND SILICIDE FORMATION AT THE REFRACTORY-METAL SILICON INTERFACE [J].
RUBLOFF, GW ;
TROMP, RM ;
VANLOENEN, EJ .
APPLIED PHYSICS LETTERS, 1986, 48 (23) :1600-1602