LASER REACTIVE ABLATION DEPOSITION OF NITRIDE FILMS

被引：23
作者：
LUCHES, A
LEGGIERI, G
MARTINO, M
PERRONE, A
MAJNI, G
MENGUCCI, P
MIHAILESCU, IN
机构：
[1] UNIV ANCONA, DEPT MAT SCI, I-60100 ANCONA, ITALY
[2] INST ATOM PHYS, BUCHAREST, ROMANIA
来源：
APPLIED SURFACE SCIENCE | 1994年 / 79-80卷
关键词：
D O I：
10.1016/0169-4332(94)90417-0
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Titanium and silicon nitride films were deposited on silicon wafers by XeCl (308 nm) excimer laser ablation of titanium and silicon, respectively, in low pressure (10(-3)-5 mbar) nitrogen-containing atmospheres. Series of 10 000 pulses at a repetition rate of 10 Hz were directed to the target surface. The fluence was set at about 5 J/cm2. Pulse duration was about 30 ns. The deposited films were characterized by different techniques (X-ray diffraction, scanning and transmission electron microscopy, etc.). Good quality films with a thickness exceeding 1 mum were obtained under specific experimental conditions.
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收藏
页码：244 / 249
页数：6
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