LASER REACTIVE ABLATION DEPOSITION OF NITRIDE FILMS

被引：23

作者：

LUCHES, A

LEGGIERI, G

MARTINO, M

PERRONE, A

MAJNI, G

MENGUCCI, P

MIHAILESCU, IN

机构：

[1] UNIV ANCONA, DEPT MAT SCI, I-60100 ANCONA, ITALY

[2] INST ATOM PHYS, BUCHAREST, ROMANIA

来源：

APPLIED SURFACE SCIENCE | 1994年 / 79-80卷

关键词：

D O I：

10.1016/0169-4332(94)90417-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Titanium and silicon nitride films were deposited on silicon wafers by XeCl (308 nm) excimer laser ablation of titanium and silicon, respectively, in low pressure (10(-3)-5 mbar) nitrogen-containing atmospheres. Series of 10 000 pulses at a repetition rate of 10 Hz were directed to the target surface. The fluence was set at about 5 J/cm2. Pulse duration was about 30 ns. The deposited films were characterized by different techniques (X-ray diffraction, scanning and transmission electron microscopy, etc.). Good quality films with a thickness exceeding 1 mum were obtained under specific experimental conditions.

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收藏

页码：244 / 249

页数：6

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