SELECTIVE AREA GROWTH OF GAAS AND IN0.53GA0.47AS EPILAYER STRUCTURES BY CHEMICAL BEAM EPITAXY USING SILICON SHADOW MASKS - A DEMONSTRATION OF THE BEAM NATURE

被引：19
作者：
TSANG, WT
机构：
来源：
APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 08期
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D O I：
10.1063/1.95911
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：742 / 744
页数：3
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