THE ADDITION OF NI IN AUZN GATE OHMIC CONTACTS FOR INP JUNCTION FIELD-EFFECT TRANSISTORS

被引：7
作者：
BOOS, JB
KRUPPA, W
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 03期
关键词：
D O I：
10.1116/1.584775
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：502 / 504
页数：3
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