RIDGE TYPE MICROFABRICATION BY MASKLESS ION-IMPLANTATION OF SI INTO SIO2 FILM

被引:1
作者
SHIOKAWA, T
MIYAMOTO, I
KIM, PH
OCHIAI, Y
MASUYAMA, A
TOYODA, K
NAMBA, S
机构
[1] TOYO UNIV,FAC ENGN,KAWAGOE,SAITAMA 350,JAPAN
[2] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 11期
关键词
D O I
10.1143/JJAP.24.L870
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L870 / L872
页数:3
相关论文
共 11 条
[1]   COLLECTION AND SPUTTERING EXPERIMENTS WITH NOBLE GAS IONS [J].
ALMEN, O ;
BRUCE, G .
NUCLEAR INSTRUMENTS & METHODS, 1961, 11 (02) :257-278
[2]   HIGH-RESOLUTION PATTERNING OF SILICON BY SELECTIVE GALLIUM DOPING [J].
BERRY, IL ;
CAVIGLIA, AL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1059-1061
[3]  
GAMO K, 1983, P INT ION ENG C ISIA
[4]  
KAMINSKY M, 1965, ATOMIC IONIC IMPACT, P158
[5]   MEASUREMENT OF VIRTUAL CROSSOVER IN LIQUID GALLIUM ION-SOURCE [J].
KOMURO, M ;
KANAYAMA, T ;
HIROSHIMA, H ;
TANOUE, H .
APPLIED PHYSICS LETTERS, 1983, 42 (10) :908-910
[6]   FOCUSED ION-BEAM MICROLITHOGRAPHY USING AN ETCH-STOP PROCESS IN GALLIUM-DOPED SILICON [J].
LAMARCHE, PH ;
LEVISETTI, R ;
WANG, YL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1056-1058
[7]  
OCHIAI Y, 1985, JPN J APPL PHYS, V24, P1169
[8]  
OCHIAI Y, 1983, J VAC SCI TECHNOL B, V1, P1059
[9]   HIGH-INTENSITY SCANNING ION PROBE WITH SUBMICROMETER SPOT SIZE [J].
SELIGER, RL ;
WARD, JW ;
WANG, V ;
KUBENA, RL .
APPLIED PHYSICS LETTERS, 1979, 34 (05) :310-312
[10]   100 KEV FOCUSED ION-BEAM SYSTEM WITH A EXB MASS FILTER FOR MASKLESS ION-IMPLANTATION [J].
SHIOKAWA, T ;
KIM, PH ;
TOYODA, K ;
NAMBA, S ;
MATSUI, T ;
GAMO, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1117-1120