RADIATION-INDUCED INCREASE IN SURFACE RECOMBINATION VELOCITY OF THERMALLY OXIDIZED SILICON STRUCTURES

被引：38
作者：
FITZGERA.DJ
GROVE, AS
机构：
来源：
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1966年 / 54卷 / 11期
关键词：
D O I：
10.1109/PROC.1966.5217
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1601 / +
页数：1
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APPLIED PHYSICS LETTERS, 1965, 6 (09) :181-&
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