MOBILITY ENHANCEMENT IN MODULATION-DOPED GAAS/ALAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：9
作者：
WANG, WI
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 06期
关键词：
D O I：
10.1063/1.93582
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：540 / 542
页数：3
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