QUANTITATIVE OXYGEN MEASUREMENTS IN OMVPE ALXGA1-XAS GROWN BY METHYL PRECURSORS

被引：49

作者：

KUECH, TF ^{[1
]}

POTEMSKI, R ^{[1
]}

CARDONE, F ^{[1
]}

SCILLA, G ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1992年 / 21卷 / 03期

关键词：

OMVPE; (ALGA)AS; DOPING; OXYGEN INCORPORATION; DEEP LEVELS;

D O I：

10.1007/BF02660464

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Oxygen has always been considered to be a major contaminant in the organo-metallic vapor phase epitaxy (OMVPE) of AlxGa1-xAs. Oxygen incorporation has been invoked as a contributor to low luminescence efficiency, dopant compensation and degradation of surface morphology among other deleterious effects. This study presents quantitative measurements of oxygen concentration in nominally high purity AlxGa1-xAs. The oxygen concentration was measured as a function of alloy composition, growth temperature, and V/III ratio. Quantitative secondary ion mass spectroscopy (SIMS) measurements were used to determine the oxygen content as well as the carbon concentration in the film. The oxygen concentration increases with decreased growth temperature and V/III ratio while increasing superlinearly with Al content in the epitaxial layer.

引用

页码：341 / 346

页数：6

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