MATHEMATICAL-MODELING OF SEMICONDUCTOR-LASERS

被引：1

作者：

CHEN, XF

FRIEDMAN, A

JIANG, LS

机构：

[1] UNIV MINNESOTA,INST MATH & APPLICAT,MINNEAPOLIS,MN 55455

[2] UNIV SUZHOU,DEPT MATH,SUZHOU,PEOPLES R CHINA

来源：

SIAM JOURNAL ON APPLIED MATHEMATICS | 1993年 / 53卷 / 01期

关键词：

SEMICONDUCTOR; LASER; ELECTROSTATIC POTENTIAL;

D O I：

10.1137/0153011

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

In the modeling of semiconductor lasers, the electrostatic potential phi is taken to be a harmonic function both in the p-region OMEGA(p) and in the n-region OMEGA(n); however, across the photoactive layer GAMMA separating these regions, both phi and its normal derivative experience jumps that are determined implicitly by a system of differential and functional equations on GAMMA. It is proved that the mathematical formulation of the problem is well-posed; i.e., it has a unique solution for the range of parameters that occur in the physical problem.

引用

页码：168 / 186

页数：19

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