MATHEMATICAL-MODELING OF SEMICONDUCTOR-LASERS

被引:1
|
作者
CHEN, XF
FRIEDMAN, A
JIANG, LS
机构
[1] UNIV MINNESOTA,INST MATH & APPLICAT,MINNEAPOLIS,MN 55455
[2] UNIV SUZHOU,DEPT MATH,SUZHOU,PEOPLES R CHINA
关键词
SEMICONDUCTOR; LASER; ELECTROSTATIC POTENTIAL;
D O I
10.1137/0153011
中图分类号
O29 [应用数学];
学科分类号
070104 ;
摘要
In the modeling of semiconductor lasers, the electrostatic potential phi is taken to be a harmonic function both in the p-region OMEGA(p) and in the n-region OMEGA(n); however, across the photoactive layer GAMMA separating these regions, both phi and its normal derivative experience jumps that are determined implicitly by a system of differential and functional equations on GAMMA. It is proved that the mathematical formulation of the problem is well-posed; i.e., it has a unique solution for the range of parameters that occur in the physical problem.
引用
收藏
页码:168 / 186
页数:19
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