FOCUSED ION-BEAM ETCHING OF RESIST MATERIALS

被引：14

作者：

HARAKAWA, K ^{[1
]}

YASUOKA, Y ^{[1
]}

GAMO, K ^{[1
]}

NAMBA, S ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 01期

关键词：

CELLULOSE DERIVATIVES - Etching - POLYMERS - Applications - POLYMETHYL METHACRYLATE - Applications;

D O I：

10.1116/1.583330

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The self-developing and processing properties of nitrocellulose were investigated in comparison with the resists such as PMMA (polymethylmethacrylate) and PBS (polybutene-1-sulfone). Then self-developed submicron patterns were drawn in nitrocellulose with focused ion beam irradiation. A 200 nm thick, 370 nm wide aluminum line pattern was obtained by using a 520 nm thick nitrocellulose layer.

引用

页码：355 / 357

页数：3

共 10 条

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