FOCUSED ION-BEAM ETCHING OF RESIST MATERIALS

被引：14
作者：
HARAKAWA, K [1 ]
YASUOKA, Y [1 ]
GAMO, K [1 ]
NAMBA, S [1 ]
机构：
[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 01期
关键词：
CELLULOSE DERIVATIVES - Etching - POLYMERS - Applications - POLYMETHYL METHACRYLATE - Applications;
D O I：
10.1116/1.583330
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The self-developing and processing properties of nitrocellulose were investigated in comparison with the resists such as PMMA (polymethylmethacrylate) and PBS (polybutene-1-sulfone). Then self-developed submicron patterns were drawn in nitrocellulose with focused ion beam irradiation. A 200 nm thick, 370 nm wide aluminum line pattern was obtained by using a 520 nm thick nitrocellulose layer.
引用
收藏
页码：355 / 357
页数：3
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