CHARGE TRANSIENT AND OPTICAL-ABSORPTION MEASUREMENTS OF CHARACTERISTIC GAP STATES IN PHOSPHORUS DOPED A-SI-H

被引：11

作者：

JOHNSON, NM

JACKSON, WB

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1984年 / 68卷 / 01期

关键词：

D O I：

10.1016/0022-3093(84)90041-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：147 / 152

页数：6

共 13 条

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[3] DEEP-LEVEL DISTRIBUTIONS IN HYDROGENATED AMORPHOUS-SILICON [J].

JOHNSON, NM .

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JOHNSON, NM .

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JOHNSON, NM .

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[6]

JOHNSON NR, UNPUB

[7] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J].

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PHYSICAL REVIEW B, 1982, 25 (08) :5285-5320

[8] ENERGY-DEPENDENCE OF ELECTRON-CAPTURE CROSS-SECTION OF GAP STATES IN N-TYPE ALPHA-SI-H [J].

OKUSHI, H ;

TOKUMARU, Y ;

YAMASAKI, S ;

OHEDA, H ;

TANAKA, K .

PHYSICAL REVIEW B, 1982, 25 (06) :4313-4316

[9] TEMPERATURE-DEPENDENCE OF ELECTRON-CAPTURE CROSS-SECTION OF LOCALIZED STATES IN A-SI-H [J].

OKUSHI, H ;

TAKAHAMA, T ;

TOKUMARU, Y ;

YAMASAKI, S ;

OHEDA, H ;

TANAKA, K .

PHYSICAL REVIEW B, 1983, 27 (08) :5184-5187

[10]

TANAKA K, 1984, J NON-CRYST, V68

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