THEORY OF METAL-INSULATOR-SEMICONDUCTOR SOLAR-CELLS

被引：168

作者：

SHEWCHUN, J

SINGH, R

GREEN, MA

机构：

[1] MCMASTER UNIV,DEPT ENGN PHYS,HAMILTON L8S 4M1,ONTARIO,CANADA

[2] MCMASTER UNIV,INST MAT RES,HAMILTON L8S 4M1,ONTARIO,CANADA

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 02期

关键词：

D O I：

10.1063/1.323667

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：765 / 770

页数：6

共 31 条

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[4]

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[5]

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[6] NON-EQUILIBRIUM EFFECTS ON METAL-OXIDE-SEMICONDUCTOR TUNNEL CURRENTS [J].

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SHEWCHUN, J .

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[7]

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[8] ROLE OF INTERFACIAL LAYER IN METAL-SEMICONDUCTOR SOLAR CELLS [J].

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[9]

FONASH SJ, 1975, 11TH P PHOT SPEC C

[10] CURRENT MULTIPLICATION IN METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL-DIODES [J].

GREEN, MA ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1974, 17 (04) :349-365

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