HOT CARRIER RELAXATION AND RECOMBINATION IN GASB/ALSB QUANTUM WELLS

被引：6
|
作者：
CEBULLA, U
ZOLLNER, S
FORCHEL, A
SUBBANNA, S
GRIFFITHS, G
KROEMER, H
机构：
[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106
[2] CSIRO,DIV RADIOPHYS,EPPING,NSW 2121,AUSTRALIA
来源：
SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 3-4期
关键词：
D O I：
10.1016/0038-1101(88)90329-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：507 / 510
页数：4
相关论文
共 50 条
  • [1] Hot electron effects in InAs/AlSb/GaSb quantum wells
    Gatzke, C
    Fobelets, K
    Rowe, AC
    Stradling, RA
    Solin, SA
    COMPOUND SEMICONDUCTORS 1998, 1999, (162): : 349 - 354
  • [2] HOT CARRIER COOLING IN GASB - BULK AND QUANTUM WELLS
    SNOW, PA
    WESTLAND, DJ
    RYAN, JF
    KERR, T
    MUNEKATA, H
    CHANG, LL
    SUPERLATTICES AND MICROSTRUCTURES, 1989, 5 (04) : 595 - 598
  • [3] PICOSECOND PHOTOLUMINESCENCE MEASUREMENTS OF HOT CARRIER RELAXATION AND AUGER RECOMBINATION IN GASB
    SNOW, PA
    MALY, P
    WESTLAND, DJ
    RYAN, JF
    SOLID-STATE ELECTRONICS, 1989, 32 (12) : 1485 - 1489
  • [4] Relaxation times in InAs/AlSb quantum wells
    Markelz, AG
    Asmar, NG
    Gwinn, EG
    Brar, B
    APPLIED PHYSICS LETTERS, 1998, 72 (19) : 2439 - 2441
  • [5] Spin states in InAs/AlSb/GaSb semiconductor quantum wells
    Li, Jun
    Yang, Wen
    Chang, Kai
    PHYSICAL REVIEW B, 2009, 80 (03):
  • [6] Landau level transitions in InAs/AlSb/GaSb quantum wells
    吴晓光
    庞蜜
    Chinese Physics B, 2015, (09) : 472 - 477
  • [7] Landau level transitions in InAs/AlSb/GaSb quantum wells
    Wu Xiao-Guang
    Mi, Pang
    CHINESE PHYSICS B, 2015, 24 (09)
  • [8] AUGER RECOMBINATION IN GASB/ALSB MULTI QUANTUM WELL HETEROSTRUCTURES
    ZIELINSKI, E
    SCHWEIZER, H
    STUBER, R
    GRIFFITHS, G
    KROEMER, H
    SUBBANNA, S
    SUPERLATTICES AND MICROSTRUCTURES, 1988, 4 (4-5) : 473 - 478
  • [9] HOT CARRIER RECOMBINATION IN GAAS-GAALAS QUANTUM WELLS AND SUPERLATTICES
    JAROS, M
    AUSTIN, EJ
    NINNO, D
    WONG, KB
    GELL, MA
    PHYSICA B & C, 1985, 134 (1-3): : 389 - 393
  • [10] AlGaSb/GaSb quantum wells grown on an optimized AlSb nucleation layer
    Gao Hanchao
    Wen Cai
    Wang Wenxin
    Jiang Zhongwei
    Tian Haitao
    He Tao
    Li Hui
    Chen Hong
    JOURNAL OF SEMICONDUCTORS, 2010, 31 (05) : 0530031 - 0530035
12345