ELECTRONIC-STRUCTURE OF HG1-XCDXTE

被引：177

作者：

HASS, KC ^{[1
]}

EHRENREICH, H ^{[1
]}

VELICKY, B ^{[1
]}

机构：

[1] HARVARD UNIV,DIV APPL SCI,CAMBRIDGE,MA 02138

来源：

PHYSICAL REVIEW B | 1983年 / 27卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.27.1088

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1088 / 1100

页数：13

共 68 条

[1]

[Anonymous], ELECTRONIC STRUCTURE

[2]

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[3]

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[8] ELECTRONIC-STRUCTURE OF HG1-XCDX TE ALLOYS AND CHARGE-DENSITY CALCULATIONS USING REPRESENTATIVE K POINTS [J].

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COHEN, ML .

PHYSICAL REVIEW B, 1973, 7 (02) :692-699

[9] SCATTERING MECHANISMS IN HG1-XCDXTE [J].

CHATTOPADHYAY, D ;

NAG, BR .

PHYSICAL REVIEW B, 1975, 12 (12) :5676-5681

[10] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

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