DEMONSTRATION OF GALLIUM-DEFECT ANNEALING AT 280-K IN IRRADIATED GAAS AND ALXGA1-XAS

Using capacitance-voltage and deep-level transient spectroscopy measurements of electron-trap concentrations, we have compared for n-type Al0.22Ga0.78As and n-type GaAs the thermal annealing at 85-500 K of lattice defects produced by irradiation (by 1.0-MeV protons) at 85 K. The isochronal annealing data indicate defect removal of similar magnitudes in each material in annealing stage I (near 235 K) and in annealing stage III (at 450-500 K), but that the magnitude of the defect removal in stage II (near 280 K) in the Al0.22Ga0.78As is only about a half of the corresponding value in the GaAs. These results show that defects involving gallium atoms are removed in annealing stage II in these materials.