STRUCTURE OF ALAS-GAAS INTERFACES GROWN ON (100) VICINAL SURFACES BY MOLECULAR-BEAM EPITAXY

被引：374
作者：
PETROFF, PM
GOSSARD, AC
WIEGMANN, W
机构：
来源：
APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 06期
关键词：
D O I：
10.1063/1.95332
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：620 / 622
页数：3
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[1]   X-RAY-DIFFRACTION STUDY OF INTER-DIFFUSION AND GROWTH IN (GAAS)N(AIAS)M MULTILAYERS [J].
FLEMING, RM ;
MCWHAN, DB ;
GOSSARD, AC ;
WIEGMANN, W ;
LOGAN, RA .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :357-363
[2]   EXTRINSIC LAYER AT ALXGA1-XAS-GAAS INTERFACES [J].
MILLER, RC ;
TSANG, WT ;
MUNTEANU, O .
APPLIED PHYSICS LETTERS, 1982, 41 (04) :374-376
[3]   EXTRINSIC PHOTO-LUMINESCENCE FROM GAAS QUANTUM WELLS [J].
MILLER, RC ;
GOSSARD, AC ;
TSANG, WT .
PHYSICA B & C, 1983, 117 (MAR) :714-716
[4]   CRYSTAL-GROWTH KINETICS IN (GAAS)N-(ALAS)M SUPER-LATTICES DEPOSITED BY MOLECULAR-BEAM EPITAXY .1. GROWTH ON SINGULAR (100)GAAS SUBSTRATES [J].
PETROFF, PM ;
GOSSARD, AC ;
WIEGMANN, W ;
SAVAGE, A .
JOURNAL OF CRYSTAL GROWTH, 1978, 44 (01) :5-13
[5]   TOWARD QUANTUM WELL WIRES - FABRICATION AND OPTICAL-PROPERTIES [J].
PETROFF, PM ;
GOSSARD, AC ;
LOGAN, RA ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1982, 41 (07) :635-638
[6]   IMPURITY TRAPPING, INTERFACE STRUCTURE, AND LUMINESCENCE OF GAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].
PETROFF, PM ;
MILLER, RC ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1984, 44 (02) :217-219
[7]   TRANSMISSION ELECTRON-MICROSCOPY OF INTERFACES IN 3-5 COMPOUND SEMICONDUCTORS [J].
PETROFF, PM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :973-978
[8]   DEPENDENCE OF THE STRUCTURAL AND OPTICAL-PROPERTIES OF GAAS-GA1-XALXAS MULTIQUANTUM-WELL STRUCTURES ON GROWTH TEMPERATURE [J].
WEISBUCH, C ;
DINGLE, R ;
PETROFF, PM ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1981, 38 (11) :840-842
[9]   SUMMARY ABSTRACT - OPTICAL CHARACTERIZATION OF INTERFACE DISORDER IN MULTIQUANTUM WELL GAAS-ALXGA1-XAS SUPER-LATTICE STRUCTURES [J].
WEISBUCH, C ;
DINGLE, R ;
GOSSARD, AC ;
WEIGMANN, W .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1128-1129
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