HIGH-CURRENT-GAIN INGAAS/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY METAL ORGANIC VAPOR-PHASE EPITAXY

被引：35
作者：
SUGIURA, O
DENTAI, AG
JOYNER, CH
CHANDRASEKHAR, S
CAMPBELL, JC
机构：
[1] AT&T Bell Lab, Holmdel, NJ, USA, AT&T Bell Lab, Holmdel, NJ, USA
来源：
IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 05期
关键词：
SEMICONDUCTING GALLIUM ARSENIDE - Growth - SEMICONDUCTING INDIUM COMPOUNDS - Doping;
D O I：
10.1109/55.707
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
By inserting a thin n-InP layer between the p** plus -InGaAs base and the n-InP collector excellent transistor characteristics were obtained. The DE and small-signal current gains were 7000 and 11,000, respectively, which are the highest values reported for transistors of this type. The transistors were also operated in a collector-up configuration with DE gains as large as 2500.
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页码：253 / 255
页数：3
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