OXYGEN GAS-SENSING CHARACTERISTICS FOR ZNO(LI) SPUTTERED THIN-FILMS

被引：29
作者：
SBERVEGLIERI, G
GROPPELLI, S
NELLI, P
QUARANTA, F
VALENTINI, A
VASANELLI, L
机构：
[1] UNIV BARI,INFM,DEPT PHYS,GNSM,CNR,I-70126 BARI,ITALY
[2] UNIV LECCE,INFM,DEPT MAT SCI,GNSM,CNR,I-73100 LECCE,ITALY
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 1992年 / 7卷 / 1-3期
关键词：
D O I：
10.1016/0925-4005(92)80397-G
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
The oxygen gas-sensing characteristics of ZnO sputtered thin films, undoped or Li doped, versus their working temperatures are reported in this paper. The Li content and the O/Zn ratio are obtained by measurements of nuclear reaction analysis (NRA) and Rutherford back-scattering (RBS), respectively. The structural properties of ZnO and ZnO(Li) films are studied by means of X-ray diffraction (XRD), the preferential orientation of the thin films is found to be (002). We have measured the variation of the electrical conductance for O2 concentrations between 100 and 2 x 10(5) ppm by means of absorption isotherms at temperatures varying from 400 to 550-degrees-C. The oxygen sensitivity and the response times for these ZnO thin films are reported here; the possible interaction mechanisms of gaseous O2 with the bulk of pure or Li-doped films will also be given.
引用
收藏
页码：747 / 751
页数：5
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