SELECTIVE MOCVD GROWTH FOR APPLICATION TO GAAS/ALGAAS BURIED HETEROSTRUCTURE LASERS

被引：13

作者：

IWASAKI, T

MATSUO, N

MATSUMOTO, N

KASHIWA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 01期

关键词：

D O I：

10.1143/JJAP.25.L66

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L66 / L69

页数：4

共 50 条

[21] Fabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires [J].

Hayashida, Atsushi ;

Sato, Takuya ;

Hara, Shinjiro ;

Motohisa, Junichi ;

Hiruma, Kenji ;

Fukui, Takashi .

JOURNAL OF CRYSTAL GROWTH, 2010, 312 (24) :3592-3598

[22] AlGaAs-GaAs buried heterostructure laser with in situ ECR or gas-phase etching and MOCVD regrowth process [J].

Ogura, M. .

Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory, 2000, 64 (03) :67-78

[23] High performance GaAs/AlGaAs radial heterostructure nanowires grown by MOCVD [J].

Jiang, N. ;

Gao, Q. ;

Parkinson, P. ;

Wong-Leung, J. ;

Tan, H. H. ;

Jagadish, C. .

2013 IEEE PHOTONICS CONFERENCE (IPC), 2013, :476-477

[24] Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers [J].

Feng, W. ;

Pan, J. Q. ;

Zhou, F. ;

Wang, L. F. ;

Bian, J. ;

Wang, B. J. ;

An, X. ;

Zhao, L. J. ;

Zhu, H. L. ;

Wang, W. .

NANOPHOTONIC MATERIALS III, 2006, 6321

[25] REPRODUCIBLE FABRICATION OF ALGAAS/GAAS CIRCULAR BURIED HETEROSTRUCTURE (CBH) SURFACE-EMITTING LASERS WITH LOW THRESHOLDS [J].

KINOSHITA, S ;

MORITO, K ;

KOYAMA, F ;

IGA, K .

ELECTRONICS LETTERS, 1988, 24 (11) :699-700

[26] Study of InGaAs/AlGaAs/GaAs semiconductor lasers with a buried mesa [J].

Golovin, V. S. ;

Shamakhov, V. V. ;

Nikolaev, D. N. ;

Veselov, D. A. ;

Lunev, A. Yu. ;

Mikhailov, V. Yu. ;

Slipchenko, S. O. ;

Pikhtin, N. A. .

INTERNATIONAL CONFERENCE LASER OPTICS 2020 (ICLO 2020), 2020,

[27] MEASUREMENT OF GAIN AND ABSORPTION-SPECTRA IN ALGAAS BURIED HETEROSTRUCTURE LASERS [J].

HENRY, CH ;

LOGAN, RA ;

MERRITT, FR .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3042-3050

[28] INTEGRATED GAAS-ALGAAS DOUBLE-HETEROSTRUCTURE LASERS [J].

HURWITZ, CE ;

ROSSI, JA ;

HSIEH, JJ ;

WOLFE, CM .

APPLIED PHYSICS LETTERS, 1975, 27 (04) :241-243

[29] Record power characteristics of InGaAs/AlGaAs/GaAs heterostructure lasers [J].

D. A. Livshits ;

A. Yu. Egorov ;

I. V. Kochnev ;

V. A. Kapitonov ;

V. M. Lantratov ;

N. N. Ledentsov ;

T. A. Nalyot ;

I. S. Tarasov .

Semiconductors, 2001, 35 :365-369

[30] INTEGRATED GAAS-ALGAAS DOUBLE-HETEROSTRUCTURE LASERS [J].

HURWITZ, CE ;

ROSSI, JA ;

HSIEH, JJ ;

WOLFE, CM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) :1061-1061

← 1 2 3 4 5 →