SELECTIVE MOCVD GROWTH FOR APPLICATION TO GAAS/ALGAAS BURIED HETEROSTRUCTURE LASERS

被引：13
作者：
IWASAKI, T
MATSUO, N
MATSUMOTO, N
KASHIWA, S
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 01期
关键词：
D O I：
10.1143/JJAP.25.L66
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：L66 / L69
页数：4
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