TEMPERATURE-DEPENDENCE OF EXCITON LIFETIMES IN GAAS/ALGAAS QUANTUM-WELL STRUCTURES

被引：45

作者：

COLOCCI, M

GURIOLI, M

VINATTIERI, A

FERMI, F

DEPARIS, C

MASSIES, J

NEU, G

机构：

[1] UNIV PARMA,DEPARTIMENTO FIS,INFM,CISM,UNIT GNSM,I-43100 PARMA,ITALY

[2] CNRS,PHYS SOLIDE & ENERGIE SOLAIRE LAB,F-06560 VALBONNE,FRANCE

来源：

EUROPHYSICS LETTERS | 1990年 / 12卷 / 05期

关键词：

D O I：

10.1209/0295-5075/12/5/007

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The photoluminescence decay times in GaAdAlGaAs single quantum well structures with layer thickness between 20 d and 80 d have been investigated in the temperature range from 4 K up to room temperature. It is shown that the increase in the PL decay time usually ascribed to radiative free-excitons recombination is present even in conditions where other mechanisms such as recombination of localized excitons and free carriers, exciton ionization and thermal activation of nonradiative processes are effective. © 1990 IOP Publishing Ltd.

引用

页码：417 / 422

页数：6

共 27 条

[21] TWO-DIMENSIONAL EXCITON TRANSPORT IN GAAS/GAALAS QUANTUM WELLS [J].

HILLMER, H ;

HANSMANN, S ;

FORCHEL, A ;

MOROHASHI, M ;

LOPEZ, E ;

MEIER, HP ;

PLOOG, K .

APPLIED PHYSICS LETTERS, 1988, 53 (20) :1937-1939

[22]

KUHL J, 1989, PLENUM ASI B, V194, P267

[23] GROWTH TEMPERATURE-DEPENDENT RADIATIVE RELAXATION IN ALGAAS GAAS MULTIPLE QUANTUM WELLS [J].

MATSUEDA, H ;

HARA, K .

APPLIED PHYSICS LETTERS, 1989, 55 (04) :362-364

[24] TRAPPING OF CARRIERS IN SINGLE QUANTUM WELLS WITH DIFFERENT CONFIGURATIONS OF THE CONFINEMENT LAYERS [J].

POLLAND, HJ ;

LEO, K ;

ROTHER, K ;

PLOOG, K ;

FELDMANN, J ;

PETER, G ;

GOBEL, EO ;

FUJIWARA, K ;

NAKAYAMA, T ;

OHTA, Y .

PHYSICAL REVIEW B, 1988, 38 (11) :7635-7648

[25] TIME-RESOLVED PHOTOLUMINESCENCE FOR QUANTUM WELL SEMICONDUCTOR HETEROSTRUCTURES [J].

RYAN, JF .

PHYSICA B & C, 1985, 134 (1-3) :403-411

[26]

SARMAGE B, 1989, SUPERLATTICE MICROST, V6, P373

[27]

ZHONGYING X, 1987, SOLID STATE COMMUN, V61, P707

← 1 2 3 →