TEMPERATURE-DEPENDENCE OF EXCITON LIFETIMES IN GAAS/ALGAAS QUANTUM-WELL STRUCTURES

被引：45

作者：

COLOCCI, M

GURIOLI, M

VINATTIERI, A

FERMI, F

DEPARIS, C

MASSIES, J

NEU, G

机构：

[1] UNIV PARMA,DEPARTIMENTO FIS,INFM,CISM,UNIT GNSM,I-43100 PARMA,ITALY

[2] CNRS,PHYS SOLIDE & ENERGIE SOLAIRE LAB,F-06560 VALBONNE,FRANCE

来源：

EUROPHYSICS LETTERS | 1990年 / 12卷 / 05期

关键词：

D O I：

10.1209/0295-5075/12/5/007

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The photoluminescence decay times in GaAdAlGaAs single quantum well structures with layer thickness between 20 d and 80 d have been investigated in the temperature range from 4 K up to room temperature. It is shown that the increase in the PL decay time usually ascribed to radiative free-excitons recombination is present even in conditions where other mechanisms such as recombination of localized excitons and free carriers, exciton ionization and thermal activation of nonradiative processes are effective. © 1990 IOP Publishing Ltd.

引用

页码：417 / 422

页数：6

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