TEMPERATURE-DEPENDENCE OF EXCITON LIFETIMES IN GAAS/ALGAAS QUANTUM-WELL STRUCTURES

被引:45
作者
COLOCCI, M
GURIOLI, M
VINATTIERI, A
FERMI, F
DEPARIS, C
MASSIES, J
NEU, G
机构
[1] UNIV PARMA,DEPARTIMENTO FIS,INFM,CISM,UNIT GNSM,I-43100 PARMA,ITALY
[2] CNRS,PHYS SOLIDE & ENERGIE SOLAIRE LAB,F-06560 VALBONNE,FRANCE
来源
EUROPHYSICS LETTERS | 1990年 / 12卷 / 05期
关键词
D O I
10.1209/0295-5075/12/5/007
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The photoluminescence decay times in GaAdAlGaAs single quantum well structures with layer thickness between 20 d and 80 d have been investigated in the temperature range from 4 K up to room temperature. It is shown that the increase in the PL decay time usually ascribed to radiative free-excitons recombination is present even in conditions where other mechanisms such as recombination of localized excitons and free carriers, exciton ionization and thermal activation of nonradiative processes are effective. © 1990 IOP Publishing Ltd.
引用
收藏
页码:417 / 422
页数:6
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