CRYSTAL-GROWTH OF COLUMN-III NITRIDES AND THEIR APPLICATIONS TO SHORT-WAVELENGTH LIGHT EMITTERS

被引:44
作者
AKASAKI, I
AMANO, H
机构
[1] Meijo University, Department of Electrical and Electronic Engineering 1-501, Tempaku-ku, Nagoya, 468, Shiogamaguchi
关键词
D O I
10.1016/0022-0248(94)00501-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Difficulty in growing high-quality column III nitrides on dissimilar substrates and difficulty in controlling conductivity, especially in achieving p-type conductivity had restricted their device applications for a long time. Establishment of the technique and understanding the mechanism for the heteroepitaxial growth of nitrides on a sapphire substrate and the realization of GaN and AlGaN having distinct p-type conductivity will lead to the accomplishment of high performance short wavelength light emitting devices based on column III nitrides.
引用
收藏
页码:455 / 461
页数:7
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