ON THE DESIGN AND CHARACTERIZATION OF A NOVEL ARSINE CRACKING FURNACE UTILIZING CATALYTIC DECOMPOSITION OF ASH3 TO YIELD A PURELY MONOMERIC SOURCE OF ARSENIC FOR MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS

被引:13
作者
KAPITAN, LW [1 ]
LITTON, CW [1 ]
CLARK, GC [1 ]
COLTER, PC [1 ]
机构
[1] UNIVERSAL ENERGY SYST,DAYTON,OH 45432
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 02期
关键词
D O I
10.1116/1.582805
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:280 / 284
页数:5
相关论文
共 18 条
[1]   ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J].
CALAWA, AR .
APPLIED PHYSICS LETTERS, 1981, 38 (09) :701-703
[2]  
CALAWA AR, COMMUNICATION
[3]  
Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[4]   SURFACE STRUCTURES AND PHOTOLUMINESCENCE OF MOLECULAR BEAM EPITAXIAL FILMS OF GAAS [J].
CHO, AY ;
HAYASHI, I .
SOLID-STATE ELECTRONICS, 1971, 14 (02) :125-&
[5]   A PH3 CRACKING FURNACE FOR MOLECULAR-BEAM EPITAXY [J].
CHOW, R ;
CHAI, YG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (01) :49-54
[6]  
CHOW R, 1983, APPL PHYS LETT, V42, P4
[7]  
CLARK GC, 1982, THESIS AIR FORCE I T
[8]   INTERACTION KINETICS OF AS2 AND GA ON [100] GAAS SURFACES [J].
FOXON, CT ;
JOYCE, BA .
SURFACE SCIENCE, 1977, 64 (01) :293-304
[9]   EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE [J].
FOXON, CT ;
HARVEY, JA ;
JOYCE, BA .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (10) :1693-&
[10]   INTERACTION KINETICS OF AS4 AND GA ON [100] GAAS SURFACES USING A MODULATED MOLECULAR-BEAM TECHNIQUE [J].
FOXON, CT ;
JOYCE, BA .
SURFACE SCIENCE, 1975, 50 (02) :434-450