COMPARISON OF DIFFERENT SOI TECHNOLOGIES - ASSETS AND LIABILITIES

被引：0

作者：

JASTRZEBSKI, L

机构：

来源：

RCA REVIEW | 1983年 / 44卷 / 02期

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D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：250 / 269

页数：20

共 33 条

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[7] GROWTH OF ELECTRONIC QUALITY SILICON OVER SIO2 BY EPITAXIAL LATERAL OVERGROWTH TECHNIQUE [J].

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