COMPARISON OF DIFFERENT SOI TECHNOLOGIES - ASSETS AND LIABILITIES

被引:0
作者
JASTRZEBSKI, L
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RCA REVIEW | 1983年 / 44卷 / 02期
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:250 / 269
页数:20
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共 33 条
[1]  
CELLER G, J CRYSTAL GROWTH
[2]   THIN SIO2-FILMS FORMED BY OXYGEN ION-IMPLANTATION IN SILICON - ELECTRON-MICROSCOPE INVESTIGATIONS OF SI-SIO2 INTERFACE STRUCTURES AND THEIR C-V CHARACTERISTICS [J].
DYLEWSKI, J ;
JOSHI, MC .
THIN SOLID FILMS, 1976, 37 (02) :241-248
[3]  
ENDO N, 1982, DEC IEDM, P241
[4]  
IPRI AC, 1982, DEC IEDM SAN FRANC, P437
[5]   MULTIPLE SOI STRUCTURE FABRICATED BY HIGH-DOSE OXYGEN IMPLANTATION AND EPITAXIAL-GROWTH [J].
IRITA, Y ;
KUNII, Y ;
TAKAHASHI, M ;
KAJIYAMA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (12) :L909-L912
[6]  
Izumi K., 1982, 1982 Symposium on VLSI Technology. Digest of Papers, P10
[7]   GROWTH OF ELECTRONIC QUALITY SILICON OVER SIO2 BY EPITAXIAL LATERAL OVERGROWTH TECHNIQUE [J].
JASTRZEBSKI, L ;
CORBOY, JF ;
PAGLIARO, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) :2645-2647
[9]  
JASTRZEBSKI L, 1983, ELECTRON DEVICE LETT, V4, P32
[10]  
JASTRZEBSKI L, 1982, 1982 SOS SOI TECHN W