ION-CLEANING DAMAGE IN(100) GAAS, AND ITS EFFECT ON SCHOTTKY DIODES

被引：35
作者：
KWAN, P
BHAT, KN
BORREGO, JM
GHANDHI, SK
机构：
来源：
SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 02期
关键词：
D O I：
10.1016/0038-1101(83)90113-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：125 / 129
页数：5
相关论文
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