CHARACTERISTICS AND 3-DIMENSIONAL INTEGRATION OF MOSFETS IN SMALL-GRAIN LPCVD POLYCRYSTALLINE SILICON

[1] BANERJEE SK, 1984, DRC

[2] STACKED CMOS SRAM CELL [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (08) : 272 - 274

[3] CHEN JY, 1983, DRC

[4] Colinge J. P., 1981, International Electron Devices Meeting, P557

[5] Colinge J. P., 1982, International Electron Devices Meeting. Technical Digest, P444

[6] STACKED TRANSISTORS CMOS (ST-MOS), AN NMOS TECHNOLOGY MODIFIED TO CMOS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 585 - 589

[7] FIELD-EFFECT IN LARGE GRAIN POLYCRYSTALLINE SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (03) : 197 - 201

[8] de Graaff H. C., 1980, International Electron Devices Meeting. Technical Digest, P46

[9] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[10] Depp S. W., 1980, International Electron Devices Meeting. Technical Digest, P703

[1] BANERJEE SK, 1984, DRC

[2] STACKED CMOS SRAM CELL [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (08) : 272 - 274

[3] CHEN JY, 1983, DRC

[4] Colinge J. P., 1981, International Electron Devices Meeting, P557

[5] Colinge J. P., 1982, International Electron Devices Meeting. Technical Digest, P444

[6] STACKED TRANSISTORS CMOS (ST-MOS), AN NMOS TECHNOLOGY MODIFIED TO CMOS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 585 - 589

[7] FIELD-EFFECT IN LARGE GRAIN POLYCRYSTALLINE SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (03) : 197 - 201

[8] de Graaff H. C., 1980, International Electron Devices Meeting. Technical Digest, P46

[9] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[10] Depp S. W., 1980, International Electron Devices Meeting. Technical Digest, P703