CURRENT DEPENDENCE OF COLLECTOR SPACE-CHARGE LAYER WIDTH OF JUNCTION TRANSISTOR

被引：0

作者：

NAKAHARA, O

机构：

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D O I：

10.1109/PROC.1963.2544

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1271 / +

页数：1

共 6 条

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[2]

DAVIS HT, 1962, INTRODUCTION NONLINE, P251

[3]

KIRK CT, 1962, IRE T ELECTRON DEV, V9, P164

[4]

NAKAHARA O, 1963, JPN J APPL PHYS, V2, P233

[5] SPACE-CHARGE LIMITED EMISSION IN SEMICONDUCTORS [J].

SHOCKLEY, W ;

PRIM, RC .

PHYSICAL REVIEW, 1953, 90 (05) :753-758

[6] TECHNOLOGY OF MICRO-ALLOY DIFFUSED TRANSISTORS [J].

THORNTON, CG ;

ANGELL, JB .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :1166-1176