OPTICAL + ELECTRICAL PROPERTIES OF SINGLE-CRYSTAL GAP VAPOR-GROWN ON GAAS SUBSTRATE

被引：29

作者：

FLICKER, H

GOLDSTEIN, B

机构：

来源：

关键词：

D O I：

10.1063/1.1713137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2959 / &

共 12 条

BAICKER, JA .

PHYSICAL REVIEW, 1963, 129 (03) :1174-&

[2]

FLICKER H, 1960, B AM PHYS SOC, V5, P407

[3] THE EPITAXIAL GROWTH OF GAP BY A GA2O VAPOR TRANSPORT MECHANISM [J].

FROSCH, CJ .

GERSHENZON, M ;

MIKULYAK, RM .

[5]

GERSHENZON M, 1962, P INT C PHYS SEMICON, P752

[6]

GERSHENZON M, PRIVATE COMMUNICATIO

[7]

LOFERSKI JJ, 1961, RCA REV, V22, P38

[8]

MOSS TS, 1962, P INTERNATIONAL C PH, P295

NICOLL, FH .

[10] OPTICAL ABSORPTION IN N-TYPE GALLIUM PHOSPHIDE [J].

SPITZER, WG ;

GERSHENZON, M ;

FROSCH, CJ ;

GIBBS, DF .